program at a glance

[List of Invited Speakers] [Program] [Abstract]

Instruction for Poster Presentation : The size of the poster board is 90(w) x 170(h) cm2. However, it is recommended to fit a poster within 70(w) x 140(h) cm2.


List of Invited Speakers

  • Advanced TCAD Technology for Nano Devices
    • Prof. Young June Park (Seoul National Univ., Korea)
      Transient simulation of the electrical double layer: a New path to bio-sensing
    • Prof. Asen Asenov (Univ. Glasgow, UK)
      Simulation of statistical variability and reliability in advanced CMOS devices
    • Prof. Zhiping Yu (Tsinghua Univ., China)
      Density-gradient modeling and complex bandstructure simulation of tunneling current in device simulation
    • Dr. Terry Ma (Synopsys, USA)
      The rol of TCAD for developing present and future nano-devices
    • Dr. Young Kwan Park (Samsung Inc., Korea)
      Advanced TCAD simulation beyond 1x nm devices
    • Prof. Mark Lundstrom (Purdue Univ., USA)
      Computational electronics in the 21st century: Status, challenges and opportunities
    • Dr. Ohkura Yasuyuki (SELETE, Japan)
      Development and challenge on 3D device and process simulation
    • Dr. Seong-Dong Kim (IBM Semicond. R&D Center, USA)
      Advanced TCAD modeling of channel mobiligy and external resistance for 20nm-node CMOS technology and beyond
    • Dr. Hyunju Chang (KRICT, Korea)
      First Principle Studies on Interface Models for Hf Oxide Gate Stack
    • Dr. Sang Uck Lee (LG Chem, Korea)
      Nanodesign and Simulations toward Nanoelectronic Devices
  • Transport Simulation for Nano Devices
    • Prof. Chen Hao (Fudan Univ., China)
      Quantum transport in zigzag graphene nanoribbons
    • Prof. Hiroshi Mizuseki (Inst. Mater. Res., Tohoku Univ., Japan)
      First-principles study on transport properties of nanoscale conjugated molecules
    • Prof. Hyoung Joon Choi (Yonsei Univ., Korea)
      Self-energy corrected scattering-state approach for electriccal and thermal transport properties in nanostructures
    • Prof. Yong-Hoon Kim (KAIST, Korea)
      Resolving controversies on the multiple conductance peaks in single-molecule junction experiemnts by multiscale simulations
    • Prof. Mincheol Shin (KAIST, Korea)
      Quantum transport of holes in nanosclae FETS: Dependence on channel orientation and impact of heavy-hole light-hole coupling
    • Prof. Satoshi Watanabe (Univ. Tokyo, Japan)
      Simulations on time-varying nanoscale electronic transport
  • Process Optimization by Computer Simulation
    • Prof. Heiji Watanabe (Osaka Univ., Japan)
      Understanding and control of metal-oxide-semiconductor interfaces for advanced nanoelectronics
    • Prof. Takanobu Watanabe (Waseda Univ., Japan)
      Force field approaches for modeling oxide-semiconductor interface
    • Dr. Alexander Schimdt (Samsung Inc., Korea)
      Atomistic stochastic simulation of front end process
    • Prof. Hiroshi Watanabe (Nat. Chiao Tung Univ., Taiwan)
      On possibility for new interface state of Si-dot surrounded by oxide
    • Prof. Scott Dunham (Univ. Washington, USA)
      Atomistic modeling of nanodevice fabrication
    • Dr. Kwang-Ryeol Lee (KIST, Korea)
      Reactive molecular dynamics simulation of gate oxide formation and it's electronic structures
  • Novel Materials for Next Generation Devices
    • Prof. Jisoon Ihm (Seoul National Univ., Korea)
      Anomalous current-voltage characteristics in defected carbon nanotubes
    • Prof. Yoshiyuki Kawazoe (Inst. Mater. Res., Tohoku Univ., Japan)
      How to predict new novel materials for next generation devices with theoretical confidence?
    • Prof. Kee-Joo Chang (KAIST, Korea)
      Role of O-vacancy defects in devices based on high-k dielectrics and amorphous oxide semiconductors
    • Prof. G. P. Das (IACS, India)
      How to functionalize Boron Nitride sheet and nanotube for device applications
    • Prof. Yuan-Ping Feng (Nat. Univ. Singapore, Singapore)
      Graphene-based spin logic gates
    • Prof. Young Woo Son (KIAS, Korea)
      Pseudo gauge fields in graphitic materials
    • Prof. Seungwu Han (Seoul Nat. Univ., Korea)
      Ab initio approach to calculate capacitance of nanocapacitors
    • Prof. Gang Zhang (Peking Univ., China)
      Simulation design of nanowires for thermoelectric device applications
    • Prof. Vijay Kumar (Vijay Kumar Foundation, India)
      Atomic structure and band gap engineering in graphene-BN hybrid nanostructures

 

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